GETTING MY N TYPE GE TO WORK

Getting My N type Ge To Work

s is always that in the substrate materials. The lattice mismatch brings about a sizable buildup of strain Power in Ge levels epitaxially grown on Si. This strain Strength is mostly relieved by two mechanisms: (i) generation of lattice dislocations in the interface (misfit dislocations) and (ii) elastic deformation of both the substrate and the Ge

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